Study of the hysteresis behaviour in carbon nanotube field effect transistor

• Main Author: Chng, Geok Lian.
• Other Authors: Wang Junling
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/44417
• Institution: Nanyang Technological University

Technology advancement requires constant improvement of performance in electronic components and the reduction in device size. Because of the excellent mechanical, electrical and chemical properties, carbon nanotube stands out among all the nanomaterials for next generation nano-scale electronic devices. The application of carbon nanotube in a field-effect transistor usually leads to p-type behaviour in ambient environment. Despite its good properties, there are many challenges in implementing carbon nanotubes in field-effect transistors. Hysteresis behaviour in the transfer characteristics exists in most carbon nanotube field-effect transistors, which is believed to be due to the trapped charges at the nanotube-dielectric interface. This makes carbon nanotube field-effect transistor unreliable in logic device applications. In this project, we have investigated different methods to reduce the hysteresis in carbon nanotube field-effect transistors. Surface passivation using self-assembled monolayer of Hexamethyldisilazane is used to terminate the OH groups on the dielectric surface; and poly(methyl methacrylate) is applied in vacuum to encapsulate the transistor to prevent moisture from adhering to the surface.