Characterization and fabrication of InGaN/GaN MQWs and LEDs on macroporous Si substrate
Growth of indium gallium nitrite (InGaN)/gallium nitride (GaN) multiple quantum well (MQW) on porous silicon (Si) and porous GaN on sapphire had been studied. Electrochemical etching was carried out to produce the porous surfaces. Effects of current, temperature, illumination and durations on electr...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project |
| Language: | English |
| Published: |
2011
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/45004 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Growth of indium gallium nitrite (InGaN)/gallium nitride (GaN) multiple quantum well (MQW) on porous silicon (Si) and porous GaN on sapphire had been studied. Electrochemical etching was carried out to produce the porous surfaces. Effects of current, temperature, illumination and durations on electrochemical etching were investigated.
Material properties and performance of light emitting diodes (LEDs) grown on porous Si and conventional substrates were compared. Characterizations results from scanning electron microscope (SEM), transmission electron microscope (TEM), reciprocal space map (RSM) and micro-photoluminescence (micro-PL) shows that MQW grown on porous Si were less stressed.
Significant improvement of 6-8 times was observed on the PL intensity of MQW grown on porous Si. |
|---|