Characterization and fabrication of InGaN/GaN MQWs and LEDs on macroporous Si substrate

Growth of indium gallium nitrite (InGaN)/gallium nitride (GaN) multiple quantum well (MQW) on porous silicon (Si) and porous GaN on sapphire had been studied. Electrochemical etching was carried out to produce the porous surfaces. Effects of current, temperature, illumination and durations on electr...

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主要作者: Dang, Dominic Thor Weng
其他作者: Tan Chuan Seng
格式: Final Year Project
語言:English
出版: 2011
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在線閱讀:http://hdl.handle.net/10356/45004
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