Characterization and fabrication of InGaN/GaN MQWs and LEDs on macroporous Si substrate

• المؤلف الرئيسي: Dang, Dominic Thor Weng
• مؤلفون آخرون: Tan Chuan Seng
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/45004

Growth of indium gallium nitrite (InGaN)/gallium nitride (GaN) multiple quantum well (MQW) on porous silicon (Si) and porous GaN on sapphire had been studied. Electrochemical etching was carried out to produce the porous surfaces. Effects of current, temperature, illumination and durations on electr...