Spin injection and detection in Fe/GaAs hybrid lateral spin-valve structure
Spintronics devices are the future of the electronics industry. One of the most attractive proposed spintronics devices is Spin field effect transistor by Datta and Das, which has not been fabricated yet due to the fundamental three problems of spintronics: spin injection, manipulation of spin degre...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/10356/45801 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Spintronics devices are the future of the electronics industry. One of the most attractive proposed spintronics devices is Spin field effect transistor by Datta and Das, which has not been fabricated yet due to the fundamental three problems of spintronics: spin injection, manipulation of spin degree of freedom of electron and spin detection. In this thesis, electrical injection and detection of spin in lateral Fe/GaAs structures has been demonstrated. Spin polarization in GaAs is created by spin injection at reverse biased Fe/GaAs Schottky tunneling barrier. Using the advanced device fabrication techniques, lateral Fe/GaAs devices are fabricated. Interface between layer of Fe and GaAs is Schottky tunnel barrier created by heavily doping GaAs surface. |
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