Spin injection and detection in Fe/GaAs hybrid lateral spin-valve structure
Spintronics devices are the future of the electronics industry. One of the most attractive proposed spintronics devices is Spin field effect transistor by Datta and Das, which has not been fabricated yet due to the fundamental three problems of spintronics: spin injection, manipulation of spin degre...
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2011
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sg-ntu-dr.10356-458012023-02-28T23:12:10Z Spin injection and detection in Fe/GaAs hybrid lateral spin-valve structure Hajiyev, Parviz Lew Wen Siang School of Physical and Mathematical Sciences DRNTU::Science::Physics::Electricity and magnetism Spintronics devices are the future of the electronics industry. One of the most attractive proposed spintronics devices is Spin field effect transistor by Datta and Das, which has not been fabricated yet due to the fundamental three problems of spintronics: spin injection, manipulation of spin degree of freedom of electron and spin detection. In this thesis, electrical injection and detection of spin in lateral Fe/GaAs structures has been demonstrated. Spin polarization in GaAs is created by spin injection at reverse biased Fe/GaAs Schottky tunneling barrier. Using the advanced device fabrication techniques, lateral Fe/GaAs devices are fabricated. Interface between layer of Fe and GaAs is Schottky tunnel barrier created by heavily doping GaAs surface. Bachelor of Science in Physics 2011-06-22T01:13:02Z 2011-06-22T01:13:02Z 2011 2011 Final Year Project (FYP) http://hdl.handle.net/10356/45801 en 71 p. application/pdf |
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DRNTU::Science::Physics::Electricity and magnetism Hajiyev, Parviz Spin injection and detection in Fe/GaAs hybrid lateral spin-valve structure |
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Spintronics devices are the future of the electronics industry. One of the most attractive proposed spintronics devices is Spin field effect transistor by Datta and Das, which has not been fabricated yet due to the fundamental three problems of spintronics: spin injection, manipulation of spin degree of freedom of electron and spin detection. In this thesis, electrical injection and detection of spin in lateral Fe/GaAs structures has been demonstrated. Spin polarization in GaAs is created by spin injection at reverse biased Fe/GaAs Schottky tunneling barrier. Using the advanced device fabrication techniques, lateral Fe/GaAs devices are fabricated. Interface between layer of Fe and GaAs is Schottky tunnel barrier created by heavily doping GaAs surface. |
author2 |
Lew Wen Siang |
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Lew Wen Siang Hajiyev, Parviz |
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Final Year Project |
author |
Hajiyev, Parviz |
author_sort |
Hajiyev, Parviz |
title |
Spin injection and detection in Fe/GaAs hybrid lateral spin-valve structure |
title_short |
Spin injection and detection in Fe/GaAs hybrid lateral spin-valve structure |
title_full |
Spin injection and detection in Fe/GaAs hybrid lateral spin-valve structure |
title_fullStr |
Spin injection and detection in Fe/GaAs hybrid lateral spin-valve structure |
title_full_unstemmed |
Spin injection and detection in Fe/GaAs hybrid lateral spin-valve structure |
title_sort |
spin injection and detection in fe/gaas hybrid lateral spin-valve structure |
publishDate |
2011 |
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http://hdl.handle.net/10356/45801 |
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1759853687206838272 |