Study of charge collection probability

• Main Author: Siti Hairunnisah Sunar.
• Other Authors: Ong Keng Sian, Vincent
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/45888
• Institution: Nanyang Technological University

The performance of electronic devices can be determined by the properties of the transport carriers inside the materials. The transport and the collection of the minority charge carrier play a significant role on the functionality and performance of semiconductor devices such as solar cell and the semiconductor characterization technique. Thus, it is of our great interest to study on the charge collection probability. This can be carried out by computing the charge collection probability of a semiconductor device. Charge collection probability describes the possibility of the charge being collected at the charge collecting junction due to the injected carriers at a particular region where an external excitation source is applied into the material. In this report, the charge collection probability of the normal-collector configuration is computed using a widely used and simple technique known as Finite Difference Method, FDM. Its accuracy will be verified by comparing the charge collection probability computed using FDM with the results achieved through a well derived analytical expression. The effects of the physical parameters of the normal-collector configuration such as the diffusion length, the sample width, the junction depth and the surface recombination velocities are explored to examine their effects on charge collection probability. Thus, this would provide better understanding of the charge collection probability with respect to various physical parameters. An application of the charge collection probability on the normal-collector configuration, i.e., the extraction of diffusion length with the used of EBIC, is reviewed using the results computed through the use of FDM.