A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor

Power amplifiers are critical components in wireless communication systems. The devices chosen for this application must offer improved microwave efficiency, linearity, power handling capacility and potentially manufacturable at low cost. Two devices were systematically studied in this thesis.

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Bibliographic Details
Main Author:	Lew, Kim Luong.
Other Authors:	Yoon, Soon Fatt
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	http://hdl.handle.net/10356/4600
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-4600
record_format	dspace
spelling	sg-ntu-dr.10356-46002023-07-04T16:30:44Z A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor Lew, Kim Luong. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Power amplifiers are critical components in wireless communication systems. The devices chosen for this application must offer improved microwave efficiency, linearity, power handling capacility and potentially manufacturable at low cost. Two devices were systematically studied in this thesis. Doctor of Philosophy (EEE) 2008-09-17T09:55:05Z 2008-09-17T09:55:05Z 2004 2004 Thesis http://hdl.handle.net/10356/4600 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Lew, Kim Luong. A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor
description	Power amplifiers are critical components in wireless communication systems. The devices chosen for this application must offer improved microwave efficiency, linearity, power handling capacility and potentially manufacturable at low cost. Two devices were systematically studied in this thesis.
author2	Yoon, Soon Fatt
author_facet	Yoon, Soon Fatt Lew, Kim Luong.
format	Theses and Dissertations
author	Lew, Kim Luong.
author_sort	Lew, Kim Luong.
title	A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor
title_short	A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor
title_full	A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor
title_fullStr	A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor
title_full_unstemmed	A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor
title_sort	study of ingap/gaas/ingap composite collector double heterojunction bipolar transistor and gaas delta-doped emitter bipolar junction transistor
publishDate	2008
url	http://hdl.handle.net/10356/4600
_version_	1772827136440139776

A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor

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