Design, modelling and characterisation of submicron MOSFETs
A novel approach to formulating unified compact threshold voltage and drain current models for deep-submicron MOSFETs are present, which is based on a combined anlaytical derivation, (2-D) numerical simulation, and experimental correlation.
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/4671 |
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| Institution: | Nanyang Technological University |
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