Physics of nitride-based high density quantum dot lasers

• Main Author: Yoon, Soon Fatt.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
• Online Access: http://hdl.handle.net/10356/47600
• Institution: Nanyang Technological University

The development of semiconductor lasers has been revolutionized by the use of quantum confinement made possible by the advanced epitaxial growth methods such as molecular beam epitaxy (MBE). Through this epitaxy method, low dimensional structures such as quantum well (QW) and quantum dot (QD) can be achieved. The use of low-dimensional QD active region for semiconductor laser over QW structures has been expected to improve many aspects of the laser performance such as, decreased transparency current density, higher characteristic temperature and output power, increased differential gain, suppressed carrier diffusion and larger tunability of wavelength emission through controlling the QD size and composition.