Physics of nitride-based high density quantum dot lasers

The development of semiconductor lasers has been revolutionized by the use of quantum confinement made possible by the advanced epitaxial growth methods such as molecular beam epitaxy (MBE). Through this epitaxy method, low dimensional structures such as quantum well (QW) and quantum...

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Bibliographic Details
Main Author: Yoon, Soon Fatt.
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Language:English
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/10356/47600
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Institution: Nanyang Technological University
Language: English

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