Directional and controllable edge-emitting ZnO ultraviolet random laser diodes
Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed i-ZnO:Al(3%)/n-ZnO:Al(5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heteroju...
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格式: | Article |
語言: | English |
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2011
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在線閱讀: | https://hdl.handle.net/10356/93851 http://hdl.handle.net/10220/6943 |
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