Directional and controllable edge-emitting ZnO ultraviolet random laser diodes

Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed i-ZnO:Al(3%)/n-ZnO:Al(5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heteroju...

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書目詳細資料
Main Authors: Yu, S. F., Yang, H. Y., Liang, H. K.
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2011
主題:
在線閱讀:https://hdl.handle.net/10356/93851
http://hdl.handle.net/10220/6943
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