Directional and controllable edge-emitting ZnO ultraviolet random laser diodes

Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed i-ZnO:Al(3%)/n-ZnO:Al(5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heteroju...

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Bibliographic Details
Main Authors: Yu, S. F., Yang, H. Y., Liang, H. K.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2011
Subjects:
Online Access:https://hdl.handle.net/10356/93851
http://hdl.handle.net/10220/6943
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Institution: Nanyang Technological University
Language: English