Directional and controllable edge-emitting ZnO ultraviolet random laser diodes
Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed i-ZnO:Al(3%)/n-ZnO:Al(5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heteroju...
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Main Authors: | , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2011
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/93851 http://hdl.handle.net/10220/6943 |
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Institution: | Nanyang Technological University |
Language: | English |