Germanium on silicon epitaxy and applications

• 主要作者: Trieu, Thi Mai Trang.
• 其他作者: Tan Chuan Seng
• 格式: Final Year Project
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: http://hdl.handle.net/10356/48616
• 機構: Nanyang Technological University

High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires...