Numerical simulation of high temperature effects on SOI mosfets

• المؤلف الرئيسي: Goh, June Mei Hui.
• مؤلفون آخرون: Zhou Xing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/49464

This project is aimed to use Taurus workbench to perform process simulation and device simulation. In this project, MEDICI is used to perform device simulation under high temperature operation. Device parameters are obtained from the simulator to analyze the behavior under high temperature operation...