Molecular beam epitaxial growth of GaNAs and GaInNAs and their characterization

• المؤلف الرئيسي: Ng, Tien Khee
• مؤلفون آخرون: Yoon Soon Fatt
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics; DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/4965

This thesis presents the systematic growth and characterization studies of the GaInNAs/GaAs Quantum Well (QW) and related GaNAs bulk material by Molecular Beam Epitaxy (MBE) technique. The motivation of this work lies in the significant advantage in growing optoelectronic devices on GaAs substrate c...