Characterization of deep submicrometer devices for RF applications

Characterization of deep submicrometer devices for RF applications

The objective of this project is to adaptively develop new high performance advanced SPICE compatible deep submicrometer MOSFETs models suitable for RFIC design, together with an efficient parameter extraction methodology. These models will incorporated the many effects induced by multi-finger MOS t...

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Main Author: Ng, Tze Cheng.
Other Authors: Yeo, Kiat Seng
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:http://hdl.handle.net/10356/4967
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-4967
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spelling sg-ntu-dr.10356-49672023-07-04T15:22:04Z Characterization of deep submicrometer devices for RF applications Ng, Tze Cheng. Yeo, Kiat Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics The objective of this project is to adaptively develop new high performance advanced SPICE compatible deep submicrometer MOSFETs models suitable for RFIC design, together with an efficient parameter extraction methodology. These models will incorporated the many effects induced by multi-finger MOS transistors and have the potential for resulting in the significant reduction in RFIC design cycle time and manufacturing costs. Master of Engineering 2008-09-17T10:02:22Z 2008-09-17T10:02:22Z 2001 2001 Thesis http://hdl.handle.net/10356/4967 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Ng, Tze Cheng.
Characterization of deep submicrometer devices for RF applications
description The objective of this project is to adaptively develop new high performance advanced SPICE compatible deep submicrometer MOSFETs models suitable for RFIC design, together with an efficient parameter extraction methodology. These models will incorporated the many effects induced by multi-finger MOS transistors and have the potential for resulting in the significant reduction in RFIC design cycle time and manufacturing costs.
author2 Yeo, Kiat Seng
author_facet Yeo, Kiat Seng
Ng, Tze Cheng.
format Theses and Dissertations
author Ng, Tze Cheng.
author_sort Ng, Tze Cheng.
title Characterization of deep submicrometer devices for RF applications
title_short Characterization of deep submicrometer devices for RF applications
title_full Characterization of deep submicrometer devices for RF applications
title_fullStr Characterization of deep submicrometer devices for RF applications
title_full_unstemmed Characterization of deep submicrometer devices for RF applications
title_sort characterization of deep submicrometer devices for rf applications
publishDate 2008
url http://hdl.handle.net/10356/4967
_version_ 1772827833700188160

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