Gallium nitride based optoelectronic devices on silicon-on-insulator substrates

Gallium nitride based optoelectronic devices on silicon-on-insulator substrates

The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substra...

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Main Author: Lin, Kaixin
Other Authors: Tripathy Sudhiranjan
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Online Access:https://hdl.handle.net/10356/50478
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-504782023-03-04T16:38:54Z Gallium nitride based optoelectronic devices on silicon-on-insulator substrates Lin, Kaixin Tripathy Sudhiranjan Akkipeddi Ramam School of Materials Science & Engineering DRNTU::Engineering::Materials::Photonics and optoelectronics materials The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substrate has been limited by the material quality due to the lack of an ideal substrate. DOCTOR OF PHILOSOPHY (MSE) 2012-06-06T02:18:09Z 2012-06-06T02:18:09Z 2012 2012 Thesis Lin,K.X. (2012). Gallium nitride based optoelectronic devices on silicon-on-insulator substrates.Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/50478 10.32657/10356/50478 en 166 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Photonics and optoelectronics materials
spellingShingle DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Lin, Kaixin
Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
description The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substrate has been limited by the material quality due to the lack of an ideal substrate.
author2 Tripathy Sudhiranjan
author_facet Tripathy Sudhiranjan
Lin, Kaixin
format Theses and Dissertations
author Lin, Kaixin
author_sort Lin, Kaixin
title Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
title_short Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
title_full Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
title_fullStr Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
title_full_unstemmed Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
title_sort gallium nitride based optoelectronic devices on silicon-on-insulator substrates
publishDate 2012
url https://hdl.handle.net/10356/50478
_version_ 1759855273634168832

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