Laser processing of optoelectronic materials
In this thesis, the objective is to study the effects of KrF excimer (248 nm) laser processing on gallium nitride (GaN) optoelectronic materials. p-GaN and GaN multiple quantum well (MQW) light-emitting diodes (LEDs) which operate in the blue and ultraviolet spectrum were used.
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| 格式: | Theses and Dissertations |
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2008
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| 在線閱讀: | http://hdl.handle.net/10356/5110 |
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