Laser processing of optoelectronic materials
In this thesis, the objective is to study the effects of KrF excimer (248 nm) laser processing on gallium nitride (GaN) optoelectronic materials. p-GaN and GaN multiple quantum well (MQW) light-emitting diodes (LEDs) which operate in the blue and ultraviolet spectrum were used.
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sg-ntu-dr.10356-51102020-06-01T11:56:52Z Laser processing of optoelectronic materials Tan, Bee Sim. Yuan, Shu School of Materials Science & Engineering DRNTU::Engineering::Materials::Photonics and optoelectronics materials In this thesis, the objective is to study the effects of KrF excimer (248 nm) laser processing on gallium nitride (GaN) optoelectronic materials. p-GaN and GaN multiple quantum well (MQW) light-emitting diodes (LEDs) which operate in the blue and ultraviolet spectrum were used. Master of Engineering (SME) 2008-09-17T10:20:14Z 2008-09-17T10:20:14Z 2004 2004 Thesis http://hdl.handle.net/10356/5110 Nanyang Technological University 140 p. application/pdf |
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DRNTU::Engineering::Materials::Photonics and optoelectronics materials Tan, Bee Sim. Laser processing of optoelectronic materials |
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In this thesis, the objective is to study the effects of KrF excimer (248 nm) laser processing on gallium nitride (GaN) optoelectronic materials. p-GaN and GaN multiple quantum well (MQW) light-emitting diodes (LEDs) which operate in the blue and ultraviolet spectrum were used. |
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Yuan, Shu |
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Yuan, Shu Tan, Bee Sim. |
format |
Theses and Dissertations |
author |
Tan, Bee Sim. |
author_sort |
Tan, Bee Sim. |
title |
Laser processing of optoelectronic materials |
title_short |
Laser processing of optoelectronic materials |
title_full |
Laser processing of optoelectronic materials |
title_fullStr |
Laser processing of optoelectronic materials |
title_full_unstemmed |
Laser processing of optoelectronic materials |
title_sort |
laser processing of optoelectronic materials |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/5110 |
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1681057279297716224 |