Laser processing of optoelectronic materials

In this thesis, the objective is to study the effects of KrF excimer (248 nm) laser processing on gallium nitride (GaN) optoelectronic materials. p-GaN and GaN multiple quantum well (MQW) light-emitting diodes (LEDs) which operate in the blue and ultraviolet spectrum were used.

Saved in:
Bibliographic Details
Main Author: Tan, Bee Sim.
Other Authors: Yuan, Shu
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/5110
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University

Similar Items