Characterization of quantum dot lasers with post-growth thermal annealing

The goal of this research work is to characterize and to suggest a method to improve the ten-layer InAs/InGaAs quantum dot (QD) laser performance by using post-growth thermal annealing. The approach of post-growth annealing is initially performed on the passive dots-in-a-well structure in this the...

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Main Author: Cao, Qi
Other Authors: Yoon Soon Fatt
Format: Theses and Dissertations
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/50742
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-507422023-07-04T17:09:21Z Characterization of quantum dot lasers with post-growth thermal annealing Cao, Qi Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The goal of this research work is to characterize and to suggest a method to improve the ten-layer InAs/InGaAs quantum dot (QD) laser performance by using post-growth thermal annealing. The approach of post-growth annealing is initially performed on the passive dots-in-a-well structure in this thesis. Interdiffusion of In and Ga atoms caused by thermal annealing has been proven from the photoluminescence measurements. The results show that p-doped QD structures are more resistant to intermixing. The post-growth thermal annealing technique is further applied to the active QD laser structure. Significant improvements in the performance of p-doped ten-layer InAs/InGaAs QD laser are demonstrated after annealing at 600 oC for 15 s. Defect reduction is thought to be the most likely mechanism contributing to the improved performance. The competition between the ground state (GS) and excited state (ES) lasing is investigated from the as-grown and thermally annealed QD lasers. Our results show that by adjusting the rapid thermal annealing temperature, the competition between the GS and ES lasing can be modified. DOCTOR OF PHILOSOPHY (EEE) 2012-10-16T04:30:20Z 2012-10-16T04:30:20Z 2012 2012 Thesis Cao, Q. (2012). Characterization of quantum dot lasers with post-growth thermal annealing. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/50742 10.32657/10356/50742 en 150 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Cao, Qi
Characterization of quantum dot lasers with post-growth thermal annealing
description The goal of this research work is to characterize and to suggest a method to improve the ten-layer InAs/InGaAs quantum dot (QD) laser performance by using post-growth thermal annealing. The approach of post-growth annealing is initially performed on the passive dots-in-a-well structure in this thesis. Interdiffusion of In and Ga atoms caused by thermal annealing has been proven from the photoluminescence measurements. The results show that p-doped QD structures are more resistant to intermixing. The post-growth thermal annealing technique is further applied to the active QD laser structure. Significant improvements in the performance of p-doped ten-layer InAs/InGaAs QD laser are demonstrated after annealing at 600 oC for 15 s. Defect reduction is thought to be the most likely mechanism contributing to the improved performance. The competition between the ground state (GS) and excited state (ES) lasing is investigated from the as-grown and thermally annealed QD lasers. Our results show that by adjusting the rapid thermal annealing temperature, the competition between the GS and ES lasing can be modified.
author2 Yoon Soon Fatt
author_facet Yoon Soon Fatt
Cao, Qi
format Theses and Dissertations
author Cao, Qi
author_sort Cao, Qi
title Characterization of quantum dot lasers with post-growth thermal annealing
title_short Characterization of quantum dot lasers with post-growth thermal annealing
title_full Characterization of quantum dot lasers with post-growth thermal annealing
title_fullStr Characterization of quantum dot lasers with post-growth thermal annealing
title_full_unstemmed Characterization of quantum dot lasers with post-growth thermal annealing
title_sort characterization of quantum dot lasers with post-growth thermal annealing
publishDate 2012
url https://hdl.handle.net/10356/50742
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