Characterization of quantum dot lasers with post-growth thermal annealing
The goal of this research work is to characterize and to suggest a method to improve the ten-layer InAs/InGaAs quantum dot (QD) laser performance by using post-growth thermal annealing. The approach of post-growth annealing is initially performed on the passive dots-in-a-well structure in this the...
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格式: | Theses and Dissertations |
語言: | English |
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2012
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在線閱讀: | https://hdl.handle.net/10356/50742 |
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機構: | Nanyang Technological University |
語言: | English |