Development of passive components for high power application
In the recent years, significant developments on III-V nitride based devices have shown remarkable results. Gallium Nitride based heterostructure transistors such as GaN High Electron Mobility Transistor (HEMT) is attractive for high power and high frequency applications because of their high breakd...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2012
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| Online Access: | http://hdl.handle.net/10356/50939 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In the recent years, significant developments on III-V nitride based devices have shown remarkable results. Gallium Nitride based heterostructure transistors such as GaN High Electron Mobility Transistor (HEMT) is attractive for high power and high frequency applications because of their high breakdown voltage, high carrier velocity and high power performance. At high voltage and high current operating biases, it is also important to have suitable passive components such as on-chip capacitors, resistors, inductors, and transmission lines which are able to handle the high current densities and voltages. |
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