Development of passive components for high power application

In the recent years, significant developments on III-V nitride based devices have shown remarkable results. Gallium Nitride based heterostructure transistors such as GaN High Electron Mobility Transistor (HEMT) is attractive for high power and high frequency applications because of their high breakd...

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Main Author: Ho, Chong Chye.
Other Authors: Ng Geok Ing
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/10356/50939
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-509392023-07-04T15:57:12Z Development of passive components for high power application Ho, Chong Chye. Ng Geok Ing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering In the recent years, significant developments on III-V nitride based devices have shown remarkable results. Gallium Nitride based heterostructure transistors such as GaN High Electron Mobility Transistor (HEMT) is attractive for high power and high frequency applications because of their high breakdown voltage, high carrier velocity and high power performance. At high voltage and high current operating biases, it is also important to have suitable passive components such as on-chip capacitors, resistors, inductors, and transmission lines which are able to handle the high current densities and voltages. Master of Science 2012-12-24T01:35:45Z 2012-12-24T01:35:45Z 2011 2011 Thesis http://hdl.handle.net/10356/50939 en 58 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Ho, Chong Chye.
Development of passive components for high power application
description In the recent years, significant developments on III-V nitride based devices have shown remarkable results. Gallium Nitride based heterostructure transistors such as GaN High Electron Mobility Transistor (HEMT) is attractive for high power and high frequency applications because of their high breakdown voltage, high carrier velocity and high power performance. At high voltage and high current operating biases, it is also important to have suitable passive components such as on-chip capacitors, resistors, inductors, and transmission lines which are able to handle the high current densities and voltages.
author2 Ng Geok Ing
author_facet Ng Geok Ing
Ho, Chong Chye.
format Theses and Dissertations
author Ho, Chong Chye.
author_sort Ho, Chong Chye.
title Development of passive components for high power application
title_short Development of passive components for high power application
title_full Development of passive components for high power application
title_fullStr Development of passive components for high power application
title_full_unstemmed Development of passive components for high power application
title_sort development of passive components for high power application
publishDate 2012
url http://hdl.handle.net/10356/50939
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