Development of massively parallel nanolithography

• Main Author: Lee, Sharon Mei Yi.
• Other Authors: School of Materials Science and Engineering
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/51499
• Institution: Nanyang Technological University

As technology is becoming more and more advanced every day, lithography techniques are also moving towards nanoscale production of components needed in integrated electronic circuits, micro electrochemical systems (MEMS) and in medical and biology field etc. An ideal lithography method is essential to obtain high resolution patterns over to meet the rising needs of technology. In this project, the task was to develop massively parallel nanolithography patterns. The report will demonstrate how the newly designed V-shaped PDMS trench array using beam pen lithography would fulfill the requirements of obtaining large surface area patterns with high resolution to cater for cell biology needs. Using this technique would overcome problems of low throughput and low resolution that other lithography techniques encounter. To achieve large area patterns with high resolution, various experimental conditions were optimized to ensure that the patterns that the student wanted was ideal for use in the research for biology cell spreading and stem differentiation. This can be done through changing the shape and pitch of the PDMS mask to create patterns with different pitches. From the experimental findings, it is evident that beam pen lithography can change between near and far field distances to allow both sub diffraction limit (100nm) and larger surface area to be produced.