Growth and characterization of germanium expitaxial film on silicon (001) using reduced pressure chemical vapor deposition (RP-CVD)

• Main Author: Tan, Yew Heng.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Theses and Dissertations
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/52548
• Institution: Nanyang Technological University

As the present Si Technology is reaching its physical and technological limits, the trend for the future would unlikely is based solely on Moore’s Law as the transistor geometrical scaling is coming to an end. As the Si substrate would still be the preferred by the semiconductor industries due to i...