High-quality doped polycrystalline silicon using low-pressure chemical vapor deposition (LPCVD)

High-quality doped polycrystalline silicon using low-pressure chemical vapor deposition (LPCVD)

10.1016/j.egypro.2018.09.014

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Bibliographic Details
Main Authors: Padhamnath, P, Nandakumar, N, Kitz, BJ, Balaji, N, Naval, MJ, Shanmugam, V, Duttagupta, S
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Conference or Workshop Item
Published: Elsevier BV 2019
Online Access:https://scholarbank.nus.edu.sg/handle/10635/155039
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/155039

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