Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

• 主要作者: Li, Yibin
• 其他作者: Zhang Shanyong, Sam
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• 在線閱讀: https://hdl.handle.net/10356/5277

Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2Ec), sufficient fatigue endurance again...