Design and fabrication of ultraviolet metal-oxide light-emitting devices
Zinc Oxide (ZnO) has a wide bandgap energy (~3.37 eV) and high exciton binding enegy (~ 60 meV) which is more than two times larger than that of Gallium Nitride (GaN). Therefore, ZnO has been recognized as a promising candidate of ultraviolet (UV) optoelectronic devices operating at room temperature...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2013
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/53756 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | Nanyang Technological University |
| 語言: | English |