Design and fabrication of ultraviolet metal-oxide light-emitting devices

Zinc Oxide (ZnO) has a wide bandgap energy (~3.37 eV) and high exciton binding enegy (~ 60 meV) which is more than two times larger than that of Gallium Nitride (GaN). Therefore, ZnO has been recognized as a promising candidate of ultraviolet (UV) optoelectronic devices operating at room temperature...

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Bibliographic Details
Main Author: Liang, Houkun
Other Authors: Chen Tupei
Format: Theses and Dissertations
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/53756
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Institution: Nanyang Technological University
Language: English