Thin film characterizations for resistive memory
Resistive memory is currently one of the focused research topics in semiconductor and microelectronics research activities. Resistive memory has advantages of high density, 3-D architecture design, easy to fabrication, low-power use, non-volatile, and high expected performance. In this project, char...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2013
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| Online Access: | http://hdl.handle.net/10356/54507 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Resistive memory is currently one of the focused research topics in semiconductor and microelectronics research activities. Resistive memory has advantages of high density, 3-D architecture design, easy to fabrication, low-power use, non-volatile, and high expected performance. In this project, characterization of the AlOx based RRAM will be fabricated in the NTU clean room will be done to investigate the performance of the bipolar RRAM to understand its device switching, stability, uniformity, reproducibility, retention, endurance and lifetime prediction.
This report will focus on the observations and discussions on the various electrical characterizations results collected and the implications which will impact the successful commercialization of the RRAM. |
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