Semiconductor nanowire growth by using VLS method
Semiconductor Nano-Wires (NWs) are hair like, one-dimensional (1D) nanomaterial with diameters in the sub-one hundred nanometer scale and lengths ranging from several hundreds of nm to as high as a few cm. Semiconductor Nano-Wires (NWs) are expected to play a key role for next generation el...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/54583 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Semiconductor Nano-Wires (NWs) are hair like, one-dimensional (1D) nanomaterial
with diameters in the sub-one hundred nanometer scale and lengths ranging from several
hundreds of nm to as high as a few cm. Semiconductor Nano-Wires (NWs) are expected
to play a key role for next generation electronic, photonic, sensor and energy device
applications.Hence it is crucial to have a better
understanding in growth, characterization, assembly and integration in semiconductor
NWs. In this project the author focus on a general scheme based on a gold (Au) cluster
catalysed vapor–liquid–solid (VLS) growth mechanism for the studying of characteristics
of NWs. |
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