Semiconductor nanowire growth by using VLS method
Semiconductor Nano-Wires (NWs) are hair like, one-dimensional (1D) nanomaterial with diameters in the sub-one hundred nanometer scale and lengths ranging from several hundreds of nm to as high as a few cm. Semiconductor Nano-Wires (NWs) are expected to play a key role for next generation el...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/54583 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-54583 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-545832023-07-07T16:55:45Z Semiconductor nanowire growth by using VLS method Zhao, Tai Ge. Tang Xiaohong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Semiconductor Nano-Wires (NWs) are hair like, one-dimensional (1D) nanomaterial with diameters in the sub-one hundred nanometer scale and lengths ranging from several hundreds of nm to as high as a few cm. Semiconductor Nano-Wires (NWs) are expected to play a key role for next generation electronic, photonic, sensor and energy device applications.Hence it is crucial to have a better understanding in growth, characterization, assembly and integration in semiconductor NWs. In this project the author focus on a general scheme based on a gold (Au) cluster catalysed vapor–liquid–solid (VLS) growth mechanism for the studying of characteristics of NWs. Bachelor of Engineering 2013-06-24T04:44:36Z 2013-06-24T04:44:36Z 2013 2013 Final Year Project (FYP) http://hdl.handle.net/10356/54583 en Nanyang Technological University 56 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Electrical and electronic engineering |
| spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering Zhao, Tai Ge. Semiconductor nanowire growth by using VLS method |
| description |
Semiconductor Nano-Wires (NWs) are hair like, one-dimensional (1D) nanomaterial
with diameters in the sub-one hundred nanometer scale and lengths ranging from several
hundreds of nm to as high as a few cm. Semiconductor Nano-Wires (NWs) are expected
to play a key role for next generation electronic, photonic, sensor and energy device
applications.Hence it is crucial to have a better
understanding in growth, characterization, assembly and integration in semiconductor
NWs. In this project the author focus on a general scheme based on a gold (Au) cluster
catalysed vapor–liquid–solid (VLS) growth mechanism for the studying of characteristics
of NWs. |
| author2 |
Tang Xiaohong |
| author_facet |
Tang Xiaohong Zhao, Tai Ge. |
| format |
Final Year Project |
| author |
Zhao, Tai Ge. |
| author_sort |
Zhao, Tai Ge. |
| title |
Semiconductor nanowire growth by using VLS method |
| title_short |
Semiconductor nanowire growth by using VLS method |
| title_full |
Semiconductor nanowire growth by using VLS method |
| title_fullStr |
Semiconductor nanowire growth by using VLS method |
| title_full_unstemmed |
Semiconductor nanowire growth by using VLS method |
| title_sort |
semiconductor nanowire growth by using vls method |
| publishDate |
2013 |
| url |
http://hdl.handle.net/10356/54583 |
| _version_ |
1772825913570885632 |