Effects of polyemitter crystal structure on the gain of a double poly bipolar transistor

It was demonstrated that the common emitter current gain of bipolar transistors could be improved by replacing the emitter metal contact by a highly doped polysilicon layer. A number of works, both theoretical and experimental, investigating this effect, have been published. In all these studies, th...

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Bibliographic Details
Main Author: Leow, Yong Faitt.
Other Authors: Wong, Chee Cheong
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/5968
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Institution: Nanyang Technological University
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