Effects of polyemitter crystal structure on the gain of a double poly bipolar transistor

It was demonstrated that the common emitter current gain of bipolar transistors could be improved by replacing the emitter metal contact by a highly doped polysilicon layer. A number of works, both theoretical and experimental, investigating this effect, have been published. In all these studies, th...

全面介紹

Saved in:
書目詳細資料
主要作者: Leow, Yong Faitt.
其他作者: Wong, Chee Cheong
格式: Theses and Dissertations
出版: 2008
主題:
在線閱讀:http://hdl.handle.net/10356/5968
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!