Effects of polyemitter crystal structure on the gain of a double poly bipolar transistor
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by replacing the emitter metal contact by a highly doped polysilicon layer. A number of works, both theoretical and experimental, investigating this effect, have been published. In all these studies, th...
محفوظ في:
| المؤلف الرئيسي: | |
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| مؤلفون آخرون: | |
| التنسيق: | Theses and Dissertations |
| منشور في: |
2008
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://hdl.handle.net/10356/5968 |
| الوسوم: |
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| المؤسسة: | Nanyang Technological University |