Effects of polyemitter crystal structure on the gain of a double poly bipolar transistor
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by replacing the emitter metal contact by a highly doped polysilicon layer. A number of works, both theoretical and experimental, investigating this effect, have been published. In all these studies, th...
Saved in:
Main Author: | Leow, Yong Faitt. |
---|---|
Other Authors: | Wong, Chee Cheong |
Format: | Theses and Dissertations |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/5968 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
Low-voltage organic ferroelectric field effect transistors using Langmuir–Schaefer films of poly(vinylidene fluoride-trifluororethylene)
by: Nguyen, Chien A., et al.
Published: (2012) -
Printed high mobility AMOS thin film transistors
by: Evanniles, Edbert
Published: (2020) -
Effect of UV exposure on indium oxide thin film transistors
by: Kok, Lendl Yi Zhi
Published: (2016) -
Investigation of turn-on voltage shift in organic ferroelectric transistor with high polarity gate dielectric
by: Nguyen, Chien A., et al.
Published: (2013) -
Effect of dielectrics and work function engineering on the performance of N-type organic thin film transistors (otfts)
by: Tan, Boon Teoh.
Published: (2010)