Analysis and characterization of ultra thin SOI MOSFET by MEDICI
In this work, the charge coupling, breakdown mechanism and self-heating effect were investigated and identified by two-dimensional and two-carrier device simulation. This work provided comprehensive understanding of unique features of ultrathin SOI MOSFETs and contributed to SOI device modeling and...
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主要作者: | |
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格式: | Theses and Dissertations |
語言: | English |
出版: |
2008
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在線閱讀: | http://hdl.handle.net/10356/5106 |
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機構: | Nanyang Technological University |
語言: | English |