Analysis and characterization of ultra thin SOI MOSFET by MEDICI

Analysis and characterization of ultra thin SOI MOSFET by MEDICI

In this work, the charge coupling, breakdown mechanism and self-heating effect were investigated and identified by two-dimensional and two-carrier device simulation. This work provided comprehensive understanding of unique features of ultrathin SOI MOSFETs and contributed to SOI device modeling and...

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Main Author: Shin, Chang Yeop.
Other Authors: School of Materials Science & Engineering
Format: Theses and Dissertations
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/5106
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Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-5106
record_format dspace
spelling sg-ntu-dr.10356-51062023-03-04T16:31:40Z Analysis and characterization of ultra thin SOI MOSFET by MEDICI Shin, Chang Yeop. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films In this work, the charge coupling, breakdown mechanism and self-heating effect were investigated and identified by two-dimensional and two-carrier device simulation. This work provided comprehensive understanding of unique features of ultrathin SOI MOSFETs and contributed to SOI device modeling and design for future high performance, low power/voltage ICs. Master of Engineering (MSE) 2008-09-17T10:20:07Z 2008-09-17T10:20:07Z 2002 2002 Thesis http://hdl.handle.net/10356/5106 en Nanyang Technological University 129 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Shin, Chang Yeop.
Analysis and characterization of ultra thin SOI MOSFET by MEDICI
description In this work, the charge coupling, breakdown mechanism and self-heating effect were investigated and identified by two-dimensional and two-carrier device simulation. This work provided comprehensive understanding of unique features of ultrathin SOI MOSFETs and contributed to SOI device modeling and design for future high performance, low power/voltage ICs.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Shin, Chang Yeop.
format Theses and Dissertations
author Shin, Chang Yeop.
author_sort Shin, Chang Yeop.
title Analysis and characterization of ultra thin SOI MOSFET by MEDICI
title_short Analysis and characterization of ultra thin SOI MOSFET by MEDICI
title_full Analysis and characterization of ultra thin SOI MOSFET by MEDICI
title_fullStr Analysis and characterization of ultra thin SOI MOSFET by MEDICI
title_full_unstemmed Analysis and characterization of ultra thin SOI MOSFET by MEDICI
title_sort analysis and characterization of ultra thin soi mosfet by medici
publishDate 2008
url http://hdl.handle.net/10356/5106
_version_ 1759855419928346624

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