Characterization of Cu-Sn-In thin films for three-dimensional heterogeneous system integration

Cu/Sn-In solder thin films were studied as a low temperature bonding material for 3D heterogeneous system integration. A new technique based on observation of color changes and combinatorial deposition of solder thin films was developed to investigate the intermetallic compound (IMC) growth kinetics...

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Main Author: Sasangka, Wardhana Aji
Other Authors: Gan Chee Lip
Format: Theses and Dissertations
Language:English
Published: 2014
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Online Access:https://hdl.handle.net/10356/60524
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-605242020-11-01T11:32:48Z Characterization of Cu-Sn-In thin films for three-dimensional heterogeneous system integration Sasangka, Wardhana Aji Gan Chee Lip School of Materials Science & Engineering Singapore-MIT Alliance Programme DRNTU::Engineering::Materials Cu/Sn-In solder thin films were studied as a low temperature bonding material for 3D heterogeneous system integration. A new technique based on observation of color changes and combinatorial deposition of solder thin films was developed to investigate the intermetallic compound (IMC) growth kinetics in Cu/Sn and Cu/SnxIn100-x bilayer systems. A general model for IMC growth kinetics in these systems was developed and was found to be in close agreement with experimental data. The model considers the diffusive flux of Cu and Sn through the IMC layer and the reaction fluxes of Cu and Sn atoms at the Cu/IMC and IMC/Sn interfaces. It was observed that IMC growth is controlled by the rate of reaction between Cu and Sn for thin IMCs. On the other hand, Cu diffusion along IMC grain boundaries and Sn diffusion through the IMC lattice is the rate limiting step for thick IMCs at low and high temperatures, respectively. It was also discovered that an addition of 44% In into Sn solder leads to the fastest IMC growth in Cu/SnxIn100-x bilayer films. Microcantilevers coupled with combinatorial deposition were used to characterize the residual stress, Young's modulus and fracture strength of Cu-Sn-In thin films. Measurement inaccuracies due to cantilever non-idealities were corrected using finite element simulations and deflection measurements at multiple locations. It was discovered that an alloy with 46% In in Sn resulted in an IMC with the highest fracture strength. The findings of this study demonstrate the potential of Sn-In solder in lowering the bonding temperature and increasing the fracture strength of the resulting IMC. Moreover, the techniques developed in this study provide a highly efficient general approach for finding solder compositions that allow the fastest and/or slowest IMC growth rate, as well as the most desirable mechanical properties. DOCTOR OF PHILOSOPHY (MSE) 2014-05-28T02:12:48Z 2014-05-28T02:12:48Z 2012 2012 Thesis Sasangka, W. A. (2012). Characterization of Cu-Sn-In thin films for three-dimensional heterogeneous system. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/60524 10.32657/10356/60524 en 162 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Sasangka, Wardhana Aji
Characterization of Cu-Sn-In thin films for three-dimensional heterogeneous system integration
description Cu/Sn-In solder thin films were studied as a low temperature bonding material for 3D heterogeneous system integration. A new technique based on observation of color changes and combinatorial deposition of solder thin films was developed to investigate the intermetallic compound (IMC) growth kinetics in Cu/Sn and Cu/SnxIn100-x bilayer systems. A general model for IMC growth kinetics in these systems was developed and was found to be in close agreement with experimental data. The model considers the diffusive flux of Cu and Sn through the IMC layer and the reaction fluxes of Cu and Sn atoms at the Cu/IMC and IMC/Sn interfaces. It was observed that IMC growth is controlled by the rate of reaction between Cu and Sn for thin IMCs. On the other hand, Cu diffusion along IMC grain boundaries and Sn diffusion through the IMC lattice is the rate limiting step for thick IMCs at low and high temperatures, respectively. It was also discovered that an addition of 44% In into Sn solder leads to the fastest IMC growth in Cu/SnxIn100-x bilayer films. Microcantilevers coupled with combinatorial deposition were used to characterize the residual stress, Young's modulus and fracture strength of Cu-Sn-In thin films. Measurement inaccuracies due to cantilever non-idealities were corrected using finite element simulations and deflection measurements at multiple locations. It was discovered that an alloy with 46% In in Sn resulted in an IMC with the highest fracture strength. The findings of this study demonstrate the potential of Sn-In solder in lowering the bonding temperature and increasing the fracture strength of the resulting IMC. Moreover, the techniques developed in this study provide a highly efficient general approach for finding solder compositions that allow the fastest and/or slowest IMC growth rate, as well as the most desirable mechanical properties.
author2 Gan Chee Lip
author_facet Gan Chee Lip
Sasangka, Wardhana Aji
format Theses and Dissertations
author Sasangka, Wardhana Aji
author_sort Sasangka, Wardhana Aji
title Characterization of Cu-Sn-In thin films for three-dimensional heterogeneous system integration
title_short Characterization of Cu-Sn-In thin films for three-dimensional heterogeneous system integration
title_full Characterization of Cu-Sn-In thin films for three-dimensional heterogeneous system integration
title_fullStr Characterization of Cu-Sn-In thin films for three-dimensional heterogeneous system integration
title_full_unstemmed Characterization of Cu-Sn-In thin films for three-dimensional heterogeneous system integration
title_sort characterization of cu-sn-in thin films for three-dimensional heterogeneous system integration
publishDate 2014
url https://hdl.handle.net/10356/60524
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