Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach

Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach

Scaling of conventional planar Si-based CMOS technology is reaching its limits towards the 16 nm technology node and further downscaling does not guarantee exponential performance improvement anymore due to various process control and reliability issues and fundamental constraints. Therefore, other...

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Main Author: Ong, Beng Sheng
Other Authors: Pey Kin Leong
Format: Theses and Dissertations
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:http://hdl.handle.net/10356/60541
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-605412020-11-01T11:32:54Z Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach Ong, Beng Sheng Pey Kin Leong School of Electrical and Electronic Engineering Singapore-MIT Alliance Programme DRNTU::Engineering::Electrical and electronic engineering Scaling of conventional planar Si-based CMOS technology is reaching its limits towards the 16 nm technology node and further downscaling does not guarantee exponential performance improvement anymore due to various process control and reliability issues and fundamental constraints. Therefore, other alternative channel materials need to be explored in order to enable ultra low-power and high-speed electronics. InxGa1-xAs with high electron mobility is considered a good replacement for n-type Si MOSFET. Alternate architectures such as FinFETs and nanowire transistors are considered for further performance enhancement and to suppress short channel effects. Doctor of Philosophy (AMM and NS) 2014-05-28T04:08:24Z 2014-05-28T04:08:24Z 2012 2012 Thesis http://hdl.handle.net/10356/60541 en 200 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Ong, Beng Sheng
Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
description Scaling of conventional planar Si-based CMOS technology is reaching its limits towards the 16 nm technology node and further downscaling does not guarantee exponential performance improvement anymore due to various process control and reliability issues and fundamental constraints. Therefore, other alternative channel materials need to be explored in order to enable ultra low-power and high-speed electronics. InxGa1-xAs with high electron mobility is considered a good replacement for n-type Si MOSFET. Alternate architectures such as FinFETs and nanowire transistors are considered for further performance enhancement and to suppress short channel effects.
author2 Pey Kin Leong
author_facet Pey Kin Leong
Ong, Beng Sheng
format Theses and Dissertations
author Ong, Beng Sheng
author_sort Ong, Beng Sheng
title Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
title_short Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
title_full Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
title_fullStr Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
title_full_unstemmed Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
title_sort platform for multi-gate inxga1-xas nanostructure nmosfet by top-down approach
publishDate 2014
url http://hdl.handle.net/10356/60541
_version_ 1688665509455724544

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