Design of voltage and current reference circuits on SOI-CMOS for high temperature applications

A CMOS bandgap reference that is able to operate at high temperature of up to 225oC is designed using XFAB 1μm technology. The designed output reference of 1.179V achieves a box model temperature coefficient of 14.625ppm/oC with a folded cascode amplifier and 17.5ppm/oC with a two-stage amplifier. T...

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Bibliographic Details
Main Author:	Quek, Michelle Wei-Ling
Other Authors:	Goh Wang Ling
Format:	Final Year Project
Language:	English
Published:	2014
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:	http://hdl.handle.net/10356/60872
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-60872
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spelling	sg-ntu-dr.10356-608722023-07-07T17:18:33Z Design of voltage and current reference circuits on SOI-CMOS for high temperature applications Quek, Michelle Wei-Ling Goh Wang Ling School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits A CMOS bandgap reference that is able to operate at high temperature of up to 225oC is designed using XFAB 1μm technology. The designed output reference of 1.179V achieves a box model temperature coefficient of 14.625ppm/oC with a folded cascode amplifier and 17.5ppm/oC with a two-stage amplifier. The power supply rejection ratio is about 81dB and 82dB respectively. The bandgap reference employs the voltage mode approach to obtain the output reference voltage. The current reference circuit is created using the same bandgap circuit bootstrapped to the two-stage amplifier. Bachelor of Engineering 2014-06-02T06:31:07Z 2014-06-02T06:31:07Z 2014 2014 Final Year Project (FYP) http://hdl.handle.net/10356/60872 en Nanyang Technological University 62 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Quek, Michelle Wei-Ling Design of voltage and current reference circuits on SOI-CMOS for high temperature applications
description	A CMOS bandgap reference that is able to operate at high temperature of up to 225oC is designed using XFAB 1μm technology. The designed output reference of 1.179V achieves a box model temperature coefficient of 14.625ppm/oC with a folded cascode amplifier and 17.5ppm/oC with a two-stage amplifier. The power supply rejection ratio is about 81dB and 82dB respectively. The bandgap reference employs the voltage mode approach to obtain the output reference voltage. The current reference circuit is created using the same bandgap circuit bootstrapped to the two-stage amplifier.
author2	Goh Wang Ling
author_facet	Goh Wang Ling Quek, Michelle Wei-Ling
format	Final Year Project
author	Quek, Michelle Wei-Ling
author_sort	Quek, Michelle Wei-Ling
title	Design of voltage and current reference circuits on SOI-CMOS for high temperature applications
title_short	Design of voltage and current reference circuits on SOI-CMOS for high temperature applications
title_full	Design of voltage and current reference circuits on SOI-CMOS for high temperature applications
title_fullStr	Design of voltage and current reference circuits on SOI-CMOS for high temperature applications
title_full_unstemmed	Design of voltage and current reference circuits on SOI-CMOS for high temperature applications
title_sort	design of voltage and current reference circuits on soi-cmos for high temperature applications
publishDate	2014
url	http://hdl.handle.net/10356/60872
_version_	1772826168073912320

Design of voltage and current reference circuits on SOI-CMOS for high temperature applications

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