導出完成 — 

Design of voltage and current reference circuits on SOI-CMOS for high temperature applications

A CMOS bandgap reference that is able to operate at high temperature of up to 225oC is designed using XFAB 1μm technology. The designed output reference of 1.179V achieves a box model temperature coefficient of 14.625ppm/oC with a folded cascode amplifier and 17.5ppm/oC with a two-stage amplifier. T...

全面介紹

Saved in:
書目詳細資料
主要作者: Quek, Michelle Wei-Ling
其他作者: Goh Wang Ling
格式: Final Year Project
語言:English
出版: 2014
主題:
在線閱讀:http://hdl.handle.net/10356/60872
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!
機構: Nanyang Technological University
語言: English