Electrical characterization of metal oxide thin film transistors

• Main Author: Mak, Wei Liang
• Other Authors: Chen Tupei
• Format: Final Year Project
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/60884
• Institution: Nanyang Technological University

Thin film transistors (TFTs) are one of the most important microelectronic components in flat panel displays. Hydrogenated amorphous silicon (a-Si:H) is the material of choice for the channel layer in TFTs used in liquid crystal displays (LCDs). This is due largely to its flexibility in its applications and can be deposited over large areas that lead to lower manufacturing costs. However a-Si:H has electrical performance problems when used in high resolution displays (e.g. organic light emitting diodes (OLEDs) and 3D display with high frame rates). This leads to the finding of a new material, which are amorphous oxide semiconductors (AOS) to be the channel layer in next generation TFTs.