Growth and characterization of III-V quantum dots on SI-based substrate

• المؤلف الرئيسي: Leong, Yu Yan
• مؤلفون آخرون: Eugene A Fitzgerald
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/61068
• المؤسسة: Nanyang Technological University

This thesis presents a systematic study of InAs quantum dot (QD) growth on Sibased substrates. Two Si-based platforms were studied, namely the graded Si1-xGex/Si substrate which has a high threading dislocation density (~106cm-2), and the germaniumon- insulator (GeOI) platform which has a lower thr...