Low-noise sensor interface circuits for implantable brain interfaces

The technological of low -noise sensor interface circuits is a frontier science in nowadays.If the research of this kind of circuit is successful,the circuit will be widely used in medicine,for example,the implantable brain interfaces.In this report,an new kind of neural amplifier will be designed...

Full description

Saved in:
Bibliographic Details
Main Author: Zhang, Beixi
Other Authors: Arindam Basu
Format: Final Year Project
Language:English
Published: 2014
Subjects:
Online Access:http://hdl.handle.net/10356/61212
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:The technological of low -noise sensor interface circuits is a frontier science in nowadays.If the research of this kind of circuit is successful,the circuit will be widely used in medicine,for example,the implantable brain interfaces.In this report,an new kind of neural amplifier will be designed and it uses a MOS-bipolar pseudo-resistor element to form this circuit.Certainly,this amplifier can amplify low-frequency signals with low-noise.This amplifier is fully integrated with characteristics like low power consumption and small area,and it can record a large range frequency of biological signal. In this circuit of amplifier, the capacitance will be used to reject dc offsets and pass the low-frequency signals.The amplification will be C1/C2,it is setted to 40dB and it can be implemented by the simulation test.This circuit also be proved that it has an input-referred noise of 4.822 uVrms.We can see in this paper that this amplifier can balance the noise and power.