Low-noise sensor interface circuits for implantable brain interfaces

• Main Author: Zhang, Beixi
• Other Authors: Arindam Basu
• Format: Final Year Project
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• Online Access: http://hdl.handle.net/10356/61212
• Institution: Nanyang Technological University

The technological of low -noise sensor interface circuits is a frontier science in nowadays.If the research of this kind of circuit is successful,the circuit will be widely used in medicine,for example,the implantable brain interfaces.In this report,an new kind of neural amplifier will be designed and it uses a MOS-bipolar pseudo-resistor element to form this circuit.Certainly,this amplifier can amplify low-frequency signals with low-noise.This amplifier is fully integrated with characteristics like low power consumption and small area,and it can record a large range frequency of biological signal. In this circuit of amplifier, the capacitance will be used to reject dc offsets and pass the low-frequency signals.The amplification will be C1/C2,it is setted to 40dB and it can be implemented by the simulation test.This circuit also be proved that it has an input-referred noise of 4.822 uVrms.We can see in this paper that this amplifier can balance the noise and power.