Piezoresponse force microscopy characterization of PbZr0.52Ti0.48O3 thin films deposited by sol-gel and pulsed laser deposition

Piezoresponse force microscopy characterization of PbZr0.52Ti0.48O3 thin films deposited by sol-gel and pulsed laser deposition

In this report, PbZr0.52Ti0.48O3 thin films deposited via sol-gel method and pulsed laser deposition (PLD) were investigated using Piezoresponse Force Microscopy (PFM) for microscopic piezoelectric characteristic measurements. Electrical properties including dielectric, ferroelectric, and piezoelect...

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Bibliographic Details
Main Author: Tan, Jun Ming
Other Authors: Chen Lang
Format: Final Year Project
Language:English
Published: 2015
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/62008
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this report, PbZr0.52Ti0.48O3 thin films deposited via sol-gel method and pulsed laser deposition (PLD) were investigated using Piezoresponse Force Microscopy (PFM) for microscopic piezoelectric characteristic measurements. Electrical properties including dielectric, ferroelectric, and piezoelectric were characterized to determine the ferroelectric nature of the films. The PFM scanned images represent topography, amplitude and phase information along in-plane and out-of-plane directions, which also include domain orientation details. The PLD deposited thin film showed strong piezoresponse signals along the out-of-plane orientation as compared to the sol-gel film. The results and discussion provide a better understanding of the localized surface morphology, ferroelectric and piezoelectric properties of the PZT thin films in the nanoscale range.

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