Morphology variation of single walled carbon nanotubes networks by lithography technology for improvement of field effect transistors
Single walled carbon nanotubes (SWNTs) are potential candidate of channel material instead of silicon in field effect transistors due to their small diameter, high carrier density and flexibility. Two major obstacles in application of SWNT networks in field effect transistors (FETs) are the existenc...
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格式: | Theses and Dissertations |
語言: | English |
出版: |
2015
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在線閱讀: | https://hdl.handle.net/10356/62109 |
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機構: | Nanyang Technological University |
語言: | English |