Phase transition in WSe2(1-x)Te2x alloys and their application in field effect transistor
Alloying of transition metal dichalcogenides is a promising approach to create materials suitable for electronic applications. WSe2 and WTe2 are from group 6 transition metal dichalcogenides and possess different structure of 2H and distorted 1T respectively. In this work, single crystals of WSe2(1-...
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sg-ntu-dr.10356-629982023-03-04T15:34:08Z Phase transition in WSe2(1-x)Te2x alloys and their application in field effect transistor Le, Quang Luan Liu Zheng School of Materials Science and Engineering DRNTU::Engineering::Materials Alloying of transition metal dichalcogenides is a promising approach to create materials suitable for electronic applications. WSe2 and WTe2 are from group 6 transition metal dichalcogenides and possess different structure of 2H and distorted 1T respectively. In this work, single crystals of WSe2(1-x)Te2x alloys (0 ≤ x ≤ 1) were successfully synthesized by chemical vapor transport while WSe2 and WTe2 were two ends of the alloy spectrum. The crystal structure of alloys depended on values of x. The alloys exhibited 2H structure for x ranged within 0-0.6 and distorted 1T structure for x values of 0.5-1. There was a shift in crystal structure from 2H to distorted 1T when x increased from 0 to 1 with a transition zone at the range of 0.5-0.6. In addition, 2H WSe2(1-x)Te2x alloys showed decrease in bandgap with increasing of x, which opened the possibility of bandgap controlling. Moreover, FET device based on few layer 2H WSe2(1-x)Te2x alloys showed Ion/Ioff ratio of 103 and charge mobility of 11.5 cm2V-1s-1; thus indicating its feasibility for application in FET and other nanoelectronics devices. Bachelor of Engineering (Materials Engineering) 2015-05-05T01:57:40Z 2015-05-05T01:57:40Z 2015 2015 Final Year Project (FYP) http://hdl.handle.net/10356/62998 en Nanyang Technological University 32 p. application/pdf |
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DRNTU::Engineering::Materials Le, Quang Luan Phase transition in WSe2(1-x)Te2x alloys and their application in field effect transistor |
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Alloying of transition metal dichalcogenides is a promising approach to create materials suitable for electronic applications. WSe2 and WTe2 are from group 6 transition metal dichalcogenides and possess different structure of 2H and distorted 1T respectively. In this work, single crystals of WSe2(1-x)Te2x alloys (0 ≤ x ≤ 1) were successfully synthesized by chemical vapor transport while WSe2 and WTe2 were two ends of the alloy spectrum. The crystal structure of alloys depended on values of x. The alloys exhibited 2H structure for x ranged within 0-0.6 and distorted 1T structure for x values of 0.5-1. There was a shift in crystal structure from 2H to distorted 1T when x increased from 0 to 1 with a transition zone at the range of 0.5-0.6. In addition, 2H WSe2(1-x)Te2x alloys showed decrease in bandgap with increasing of x, which opened the possibility of bandgap controlling. Moreover, FET device based on few layer 2H WSe2(1-x)Te2x alloys showed Ion/Ioff ratio of 103 and charge mobility of 11.5 cm2V-1s-1; thus indicating its feasibility for application in FET and other nanoelectronics devices. |
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Liu Zheng |
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Liu Zheng Le, Quang Luan |
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Final Year Project |
author |
Le, Quang Luan |
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Le, Quang Luan |
title |
Phase transition in WSe2(1-x)Te2x alloys and their application in field effect transistor |
title_short |
Phase transition in WSe2(1-x)Te2x alloys and their application in field effect transistor |
title_full |
Phase transition in WSe2(1-x)Te2x alloys and their application in field effect transistor |
title_fullStr |
Phase transition in WSe2(1-x)Te2x alloys and their application in field effect transistor |
title_full_unstemmed |
Phase transition in WSe2(1-x)Te2x alloys and their application in field effect transistor |
title_sort |
phase transition in wse2(1-x)te2x alloys and their application in field effect transistor |
publishDate |
2015 |
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http://hdl.handle.net/10356/62998 |
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1759857259471437824 |