Reconfigurable dielectric engineered WSe2/HZO mem-transistor

• Main Authors: Tong, Tong, He, Yongli, Gao, Yuan, Liu, Yukang, Liao, Kan, Li, Weisheng
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering; Linear conductance update; Reliable memory properties
• Online Access: https://hdl.handle.net/10356/180774
• Institution: Nanyang Technological University

Hybrid systems coupling two-dimensional (2D) semiconductors with functional ferroelectrics are attracting increasing attention owing to their excellent electronic/optoelectronic properties and new functionalities through the multiple heterointerface interactions. In our device architecture, interfac...