Reconfigurable dielectric engineered WSe2/HZO mem-transistor

• المؤلفون الرئيسيون: Tong, Tong, He, Yongli, Gao, Yuan, Liu, Yukang, Liao, Kan, Li, Weisheng
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering; Linear conductance update; Reliable memory properties
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/180774
• المؤسسة: Nanyang Technological University

Hybrid systems coupling two-dimensional (2D) semiconductors with functional ferroelectrics are attracting increasing attention owing to their excellent electronic/optoelectronic properties and new functionalities through the multiple heterointerface interactions. In our device architecture, interfac...