Physical reservoirs based on MoS2–HZO integrated ferroelectric field-effect transistors for reservoir computing systems

Physical reservoirs based on MoS2–HZO integrated ferroelectric field-effect transistors for reservoir computing systems

10.1039/D3NH00524K

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Bibliographic Details
Main Authors: Lingqi Li, Heng Xiang, Haofei Zheng, Yu-Chieh Chien, Ngoc Thanh Duong, Jing Gao, Kah Wee Ang
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: 2024
Online Access:https://scholarbank.nus.edu.sg/handle/10635/248338
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Institution: National University of Singapore
Language: English

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https://scholarbank.nus.edu.sg/handle/10635/248338

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